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 Memory ICs
System reset IC
BH6150F
The BH6150F has two reset circuits, one detects the power supply voltage, and the other detects the input voltage. With this one IC it is possible to apply a reset to the logic systems of CPUs, and mechanical systems.
*Applications CPUs, MPUs, logic circuits, reset Personal computers,
circuits for mechanical systems, level detector circuits, battery voltage detector circuits, and backup power supply switching circuits
*Featuresof reset circuit provided. Two types
1) Reset circuit 1 (input voltage detector) Detection voltage: 1.25V (Typ.) Transmission delay time: 200s (Typ.) Open collector output, and 10k pull-up resistor on chip. 2) Reset circuit 2 (supply voltage detector) Detection voltage: 4.2V (Typ.) Transmission delay time: 25, 50, 100 and 200 ms (select using the Ct0 and Ct1 pins) Manual reset function provided Open collector output, and 10k pull-up resistor on chip.
*Absolute maximum ratings (Ta = 25C)
Parameter Power supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC Pd Topr Tstg Limits - 0.3 ~ + 7.0 450 - 20 ~ + 75 - 40 ~ + 125 Unit V mW C C
Reduced by 4.5mW for each increase in Ta of 1C over 25C.
1
Memory ICs
BH6150F
*Block diagram
8 7 6 5
Reset Circuit 1
10k
- +
-
Vref 1.25V
Reset Circuit 2
10k
+ -
Delay Circuit
Vref 1.25V
1
2
3
4
*Pin descriptions
Pin No. 1 2 3 4 5 6 7 8 Pin name Ct0 Input Ct1 GND Output 2 Output 1 VCC Manual reset Delay time control Reset circuit 1 input Delay time control GND Reset circuit 2 output Reset circuit 1 output Power supply Manual reset input Function
When neither Ct0 or Ct1 are connected, the delay time is 100ms (Typ.).
2
Memory ICs
BH6150F
*Input / output circuits
Ct0, Ct1 Input
Manual reset
Output 1, Output 2
3
Memory ICs
BH6150F
*Electrical characteristics (unless otherwise specified VCC = 4.5V to 5.5V and Ta = 25C) Reset circuit 1
Parameter Detection voltage Hysteresis voltage High level transmission delay time Low level transmission delay time Output low level voltage Input voltage range Input current Symbol VS1 VS1 TPLH1 TPHL1 VOL1 VIN IIN Min. 1.20 9 80 -- -- - 0.3 -- Typ. 1.25 15 200 10 0.1 -- 200 Max. 1.30 23 500 -- 0.4 VCC 500 Unit V mV s s V V nA VIN = 1.25V CL = 100pF CL = 100pF VIN < 1.2V, IOL = 5mA -- Conditions -- --
Reset circuit 2
Parameter Detection voltage Hysteresis voltage High level transmission delay time Symbol VS2 VS2 TPLH2 Min. 4.0 30 15 30 60 120 Low level transmission delay time Output low level voltage Manual reset Input high level voltage Input high level current Input low level voltage TPHL2 VOL2 VRESH IRESH VRESL -- -- 2 -- - 0.3 Typ. 4.2 50 25 50 100 200 0.5 0.1 -- 20 -- Max. 4.4 100 35 70 140 280 -- 0.4 VCC 80 0.8 Unit V mV ms ms ms ms s V V A V VRES = 2V -- Conditions -- -- Ct0 = L, Ct1 = H Ct0 = H, Ct1 = L Ct0 = H, Ct1 = H Ct0 = L, Ct1 = L CL = 100pF VCC < 4V, IOL = 5mA -- CL = 100pF
Common specifications
Parameter Circuit current when off Circuit current when on Detection voltage temperature coefficient Output high level voltage Operation limit voltage Symbol ICC1 ICC2 VS / T VOH1,2 VOPL1,2 Min. -- -- -- Typ. 1000 2 0.01 Max. 1400 3 -- -- 0.85 Unit A mA % / C V V IOH = 40A VSAT 0.4V, RL = 1K Conditions VCC = 5V, VIN > VS1 VCC = 4V, VIN < VS1 --
VCC - 0.7 VCC - 0.4 -- 0.71
4
Memory ICs
BH6150F
*Measurement circuit
VCC RL = 1k VOPL2: ON
CL
V
VOH1 VOL1 VOPL1 VCC RL = 1k
IOH IOL
ICC1 ICC2
A
IRESH
A
8 MRES
7 VCC
6
5
VOPL2: ON
OUT 1 OUT 2 CL V VOH2 VOL2 VOPL2 IOH IOL
VCC VRES
BH6150F
Ct0 1 IN 2 Ct1 3 GND 4
A
IIN VS1 VS1
VIN
5
Memory ICs
BH6150F
*Circuit operation
VIN 5V VS1 + VS1 (Typ. = 1.265V) VS1 (Typ. = 1.25V) 0V VOUT1 VOH
TPLH1
TPHL1
TPLH1
VOL1
VCC VS2 + VS2 (Typ. = 4.25V) VS2 (Typ. = 4.2V)
VCC
0V VOUT2 VOH
TPLH2
TPHL2
TPLH2
VOL2
6
Memory ICs
BH6150F
*Electrical characteristic curves
1.35 HYSTERESIS VOLTAGE: VS1 (mV) DETECTING VOLTAGE: VS1 (V) 25 1.30 20
1.25
15
1.20
10
1.15 - 20
0
20
40
60
80
5 - 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (C)
AMBIENT TEMPERATURE: Ta (C)
Fig. 1 Reset circuit 1 detector voltage vs. ambient temperature
280 DETECTING VOLTAGE: VS2 (V) 4.4
Fig. 2 Reset circuit 1 Hysteresis voltage vs. ambient temperature
"H" PROPAGATION DELAY TIME: TPLH1 (S)
240
4.3
200
4.2
160
4.1
120
4.0
80 - 20
0
20
40
60
80
3.8 - 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (C)
AMBIENT TEMPERATURE: Ta (C)
Fig. 3 Reset circuit 1 high level transmission delay time vs. ambient temperature
Fig. 4 Reset circuit 2 detector voltage vs. ambient temperature
"H" PROPAGATION DELAY TIME: TPLH2 (mS)
100 HYSTERESIS VOLTAGE: VS2 (mV)
200
80
160
Ct0 = L, Ct1 = L
60
120 Ct0 = H, Ct1 = H 80 Ct0 = H, Ct1 = L 40 Ct0 = L, Ct1 = H 0 - 20 0 20 40 60 80
40
20
0 - 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (C)
AMBIENT TEMPERATURE: Ta (C)
Fig. 5 Reset circuit 2 Hysteresis voltage vs. ambient temperature
Fig. 6 Reset circuit 2 high level transmission delay time vs. ambient temperature
7
Memory ICs
BH6150F
MAXIMUM OPERATING VOLTAGE: VOPL1, 2 (V)
1.0
RL = 1k 0.5 RL = 27k RL =
0 0 0.5 POWER SUPPLY VOLTAGE: VCC (V) 1.0
Fig. 7 Operation limit voltage vs. power supply voltage
*External dimensions (Units: mm)
5.0 0.2 8 6.2 0.3 4.4 0.2 5
1.5 0.1
1
4
0.11
1.27
0.4 0.1
0.3Min. 0.15
SOP8
8
0.15 0.1


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